Publications

Journals and Conferences

Google Scholar – https://scholar.google.com/citations?user=upQO_vAAAAAJ&hl=en&oi=ao

Corresponding author: #; Equal Contribution: *

• S. Li#, D. Zhong, C. Gilardi, N. Safron, TA. Chao, G. Zeevi, S. Rijs, A. D. Bechdolt, M. Passlack, G. Pitner#, L. Radu, HS. Wong, S. Mitra. “Iso-performance N-type and P-type MOSFETs on densely aligned CNT array enabled by self-aligned extension doping with barrier booster”, IEEE International Electron Devices Meeting (2024).
• N. Safron, TA. Chao, S. Li, S. Natani, SL. Liew, HY. Chiu, SK. Su, A. Bechdolt., C. Gilardi, G. Zeevi, Z. Zhang, M. Passlack, V. Hou, H. Kashyap, CH. Chien, P. Bandaru, A. Kummel, HS. Wong, S. Mitra, G. Pitner, L. Radu. “ High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure.” IEEE Symposium on VLSI Technology and Circuits (2024).
• G. Wu, L. Xiang, W. Wang, C. Yao, C. Zhang, J. Wu, Y. Liu, B. Zheng, H. Liu, X. Sun, C. Zhu, Y. Wang, D. Li#, A. Pan#, S. Li#. “Hierarchical Processing Enabled by 2D Ferroelectric Semiconductor Transistor for Low-Power and High-Efficiency AI Vision System”, Science Bulletin (2024).
• C. Zhang, B. Zheng, G. Wu, X. Liu, J. Wu, C. Yao, Y. Wang, Z. Tang, Y. Chen, L. Fang, L. Huang, D. Li#, S. Li#, A. Pan#. “Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector.” Nano Research (2024).
• S. Li#, TA. Chao, C. Gilardi, N. Safron, SK. Su, G. Zeevi, A. D. Bechdolt, M. Passlack, A. Oberoi, Q. Lin, Z. Zhang, K. Wang, H. Kashyap, S.L. Liew, V. Hou, P. Bandaru, A. Kummel, L. Radu, G. Pitner#, HS. Wong, S. Mitra. “High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer”, IEEE International Electron Devices Meeting (2023).
• T. Srimani, A. Bechdolt, S. Choi, C. Gilardi, A. Kasperovich, S. Li, Q. Lin, M. Malakoutian, P. McEwen, R.M. Radway, D. Rich, A.C. Yu, S. Fuller, S. Achour, S. Chowdhury, H.-S. P. Wong, M. Shulaker, S. Mitra. “N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding”, IEEE International Electron Devices Meeting (2023), invited paper.
• C. Gilardi, G. Zeevi, S. Choi, SK. Su, T. Hung, S. Li, N. Safron, Q. Lin, T. Srimani, M. Passlack, G. Pitner, E. Chen, L. Radu, HS. Wong, S. Mitra. “Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs”, IEEE International Electron Devices Meeting (2023).
• G. Pitner, N. Safron, TA. Chao, S. Li, SK. Su*, G. Zeevi, Q. Lin, HY. Chiu, M. Passlack, Z. Zhang, D. Sathaiya, A. Wei, C. Gilardi, E. Chen, SL. Liew, V. Hou, CW. Wu, J. Wu, Z. Lin, J. Fagan, M. Zheng, H. Wang, S. Mitra, HS. Wong, L. Radu. “Building high-performance transistors on carbon nanotube channel.” IEEE Symposium on VLSI Technology and Circuits (2023).
• K. Toprasertpong, S. Liu, J. Chen, S. Wahid, K. Jana, WC. Chen, S. Li, E. Pop, and HS. Wong. “Co-designed Capacitive Coupling-Immune Sensing Scheme for Indium-Tin-Oxide (ITO) 2T Gain Cell Operating at Positive Voltage Below 2 V.” IEEE Symposium on VLSI Technology and Circuits (2023).
• C. Yao, G. Wu, M. Huang, W. Wang, C. Zhang, J. Wu, H. Liu, B. Zheng, J. Yi, C. Zhu, Z. Tang, Y. Wang, M. Huang, L. Huang, Z. Li, L. Xiang, D. Li#, S. Li#, A. Pan#. “Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory.” ACS Applied Materials & Interfaces (2023).
• B. Zheng, X. Sun, W. Zheng, C. Zhu, C. Ma, A. Pan, D. Li#, and S. Li#, “Vapor Growth of V-Doped MoS2 Monolayers with Enhanced B-Exciton Emission and Broad Spectral Response”, Frontiers of Optoelectronics (2023).
• S. Liu, S. Li, Q. Lin, S. Mitra, HS. Wong, K. Toprasertpong*. “Hybrid 2T nMOS/pMOS Gain Cell Memory with indium-tin-oxide and carbon nanotube MOSFETs for Counteracting Capacitive Coupling”, IEEE Electron Device Letters (2023).
• M. Huang, W. Ali, L. Yang, J. Huang, C. Yao, Y. Xie, R. Sun, C. Zhu, Y. Tan, X. Liu, S. Li, Z. Wei#, A. Pan#. “Multifunctional Optoelectronic Synapses Based on Arrayed MoS2 Monolayers Emulating Human Association Memory.” Advanced Science (2023).
• TA. Chao, CP. Chuu, SL. Liew, IF. Hu, SK. Su, S. Li, SC. Lin, V. Hou, HS. Wong, I. Radu, WH. Chang, G. Pitner, H. Wang. “Small Molecule Additives to Suppress Bundling in Dimensional-Limited Self-Alignment Method for High-Density Aligned CNT Array.” Advanced Materials Interfaces (2023).
• W. Wu, M. Zhou, D. Li, S. Li, Z. Yang, Z. Huo, Y. Wu, Y. Tan, X. Han#, C. Pan#, A. Pan#. “A novel visible light sensing and recording system enabled by integration of photodetector and electrochromic devices.” Nanoscale (2021).
• J. Yi, X. Sun, C. Zhu, S. Li, Y. Liu, X. Zhu, W. You, D. Liang, Q. Shuai, Y. Wu, D. Li#, A. Pan#. “Double-Gate MoS2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic Circuits.” Advanced Materials (2021).
• S. Li, C. Gu, X. Li, R. Huang, Y. Wu. “10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility.” IEEE International Electron Devices Meeting (2020).
• S. Li, M. Tian, Q. Gao, M. Wang, T. Li, Q. Hu, X. Li and Y Wu. “Nanometer-thin indium tin oxide for advanced high-performance electronics.” Nature Materials (2019).
• S. Li, M Tian, C Gu, R Wang, M Wang, X Xiong, X Li, R Huang, Y Wu. “BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V.” IEEE International Electron Devices Meeting (2019).
• M. Wang, X. Li, X. Xiong, J. Song, C. Gu, D. Zhan, Q. Hu, S. Li, Y. Wu. “High-performance flexible ZnO thin-film transistors by atomic layer deposition.” IEEE Electron Device Letters (2019).
• Q. Hu, B. Hu, C. Gu, T. Li, S. Li, S. Li, X. Li, Y. Wu. “Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering.” IEEE Transactions on Electron Devices (2019).
• M. Wang, M. Tian, Z. Zhang, S. Li, R. Wang, C. Gu, X. Shan, X. Xiong, X. Li, R. Huang and Y. Wu. “High-performance gigahertz flexible radio frequency transistors with extreme bending conditions.” IEEE International Electron Devices Meeting (2019).
• T. Li, M. Tian, S. Li, M. Huang, X. Xiong, Q. Hu, S. Li, X. Li, Y. Wu. “Black phosphorus radio frequency electronics at cryogenic temperatures.” Advanced Electronic Materials (2018).
• M. Tian, X. Xiong, M. Huang, T. Li, S. Li, Q. Hu, X. Li, Y. Wu. “High-performance two-dimensional transistors and circuits.” IEEE International Conference on Solid-State and Integrated Circuit Technology (2018).
• X. Li, J. Wu, Y. Ye, S. Li, T. Li, X. Xiong, X. Xu, T. Gao, X. Xie, Y. Wu. “Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering.” ACS Applied Materials & Interfaces (2018).
• M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li, Y. Wu. “ Multifunctional high-performance van der Waals heterostructures.” Nature Nanotechnology (2017).
• T. Li, Z. Zhang, X. Li, M. Huang, S. Li, S. Li, Y. Wu. “ High field transport of high-performance black phosphorus transistors.” Applied Physics Letters (2017).

Invited Talks & Presentations

• Shengman Li. “Remote doping for Carbon Nanotube Transistors” 2024 NT24, Boston, MA, June 2024. (Invited talk)
• Shengman Li. “Carbon Nanotube Transistors for a Future 3D Logic Technology” 2023 MRS Fall Meeting, Boston, MA, November 2023. (Invited talk)
• Shengman Li. “High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer”, 2023 IEEE International Electron Devices Meeting, San Francisco, CA, December 2023.
• Shengman Li. “Building high-performance transistors on carbon nanotube channel.” SystemX Fall Conference, Stanford University, Nov 2023.
• Shengman Li. “Building high-performance transistors on carbon nanotube channel.” 2023 Symposium on VLSI Technology and Circuits, Kyoto, Japan, June 2023.
• Shengman Li., “Extension doping for carbon-nanotube transistors.” TSMC Corporate Research Seminar Series, Virtual, May 2023.
• Shengman Li. “High-performance and low-power electronic devices based on indium-tin oxide.” Stanford Seminar, Stanford University, Feb 2022.
• Shengman Li. “Electronic Devices Based on Ultra-thin Indium Tin Oxide.” 2021 Materials Today Nano, online, China, March 2021. (Invited talk)
• Shengman Li. “High-performance and low-power electronic devices based on indium-tin oxide.” 2020 Summit of Emerging Electronic Materials and Devices Symposium on Low-Dimensional Material Application and Standardization, Wuxi, Jiangsu, China, December 2020. (Invited talk)
• Shengman Li. “10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility.” 2020 IEEE International Electron Devices Meeting, San Francisco, CA, December 2020.
• Shengman Li. “BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V.” 2019 IEEE International Electron Devices Meeting, San Francisco, CA, December 2019.
• Shengman Li. “ Van der Waals Heterostructures Based on Two-dimensional Materials.” 2018 APS March Meeting, Los Angeles, CA, March 2018.